GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector
Identifieur interne : 00A445 ( Main/Repository ); précédent : 00A444; suivant : 00A446GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector
Auteurs : RBID : Pascal:04-0242314Descripteurs français
- Pascal (Inist)
- Wicri :
- concept : Argent.
English descriptors
- KwdEn :
Abstract
A GaInN light-emitting diode (LED) employing an omni-directional reflector (ODR) is presented. The ODR consists of a RuO2 ohmic contact to p-type GaN, a quarter-wave thick SiO2 low-index layer perforated by an array of micro-contacts, and an Ag layer. Calculations predict a 98% angle-averaged reflectivity at λ=450 nm for an GaN/SiO2/Ag ODR, much higher than that for a 20 period Al0.25Ga0.75N/GaN distributed Bragg reflector (49%) and an Ag reflector (94%). It is shown that the RuO2/SiO2/Ag ODR has higher reflectivity than Ni/Au and even Ag reflectors, leading to a higher light extraction efficiency of GaInN LEDs with ODR. The electrical properties of the ODR-LED are comparable to those LEDs with a conventional Ni/Au contact. © 2004 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 00B732
Links to Exploration step
Pascal:04-0242314Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">GaInN light-emitting diodes with RuO<sub>2</sub>/SiO<sub>2</sub>/Ag omni-directional reflector</title><author><name sortKey="Kim, Jong Kyu" uniqKey="Kim J">Jong Kyu Kim</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>The Future Chips Constellation, Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>The Future Chips Constellation, Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy</wicri:cityArea></affiliation></author><author><name sortKey="Gessmann, Thomas" uniqKey="Gessmann T">Thomas Gessmann</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>The Future Chips Constellation, Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>The Future Chips Constellation, Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy</wicri:cityArea></affiliation></author><author><name sortKey="Luo, Hong" uniqKey="Luo H">Hong Luo</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>The Future Chips Constellation, Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>The Future Chips Constellation, Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy</wicri:cityArea></affiliation></author><author><name sortKey="Schubert, E Fred" uniqKey="Schubert E">E. Fred Schubert</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>The Future Chips Constellation, Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>The Future Chips Constellation, Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0242314</idno><date when="2004-05-31">2004-05-31</date><idno type="stanalyst">PASCAL 04-0242314 AIP</idno><idno type="RBID">Pascal:04-0242314</idno><idno type="wicri:Area/Main/Corpus">00B732</idno><idno type="wicri:Area/Main/Repository">00A445</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Distributed Bragg reflectors</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Light emitting diodes</term><term>Ohmic contacts</term><term>Reflectivity</term><term>Ruthenium compounds</term><term>Semiconductor thin films</term><term>Silicon compounds</term><term>Silver</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560J</term><term>4282G</term><term>7340N</term><term>Etude expérimentale</term><term>Gallium composé</term><term>Indium composé</term><term>Ruthénium composé</term><term>Silicium composé</term><term>Argent</term><term>Semiconducteur III-V</term><term>Couche mince semiconductrice</term><term>Semiconducteur bande interdite large</term><term>Diode électroluminescente</term><term>Réflecteur Bragg réparti</term><term>Facteur réflexion</term><term>Contact ohmique</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Argent</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A GaInN light-emitting diode (LED) employing an omni-directional reflector (ODR) is presented. The ODR consists of a RuO<sub>2</sub> ohmic contact to p-type GaN, a quarter-wave thick SiO<sub>2</sub> low-index layer perforated by an array of micro-contacts, and an Ag layer. Calculations predict a 98% angle-averaged reflectivity at λ=450 nm for an GaN/SiO<sub>2</sub>/Ag ODR, much higher than that for a 20 period Al<sub>0.25</sub>Ga<sub>0.75</sub>N/GaN distributed Bragg reflector (49%) and an Ag reflector (94%). It is shown that the RuO<sub>2</sub>/SiO<sub>2</sub>/Ag ODR has higher reflectivity than Ni/Au and even Ag reflectors, leading to a higher light extraction efficiency of GaInN LEDs with ODR. The electrical properties of the ODR-LED are comparable to those LEDs with a conventional Ni/Au contact. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>22</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>GaInN light-emitting diodes with RuO<sub>2</sub>/SiO<sub>2</sub>/Ag omni-directional reflector</s1></fA08><fA11 i1="01" i2="1"><s1>KIM (Jong Kyu)</s1></fA11><fA11 i1="02" i2="1"><s1>GESSMANN (Thomas)</s1></fA11><fA11 i1="03" i2="1"><s1>LUO (Hong)</s1></fA11><fA11 i1="04" i2="1"><s1>SCHUBERT (E. Fred)</s1></fA11><fA14 i1="01"><s1>The Future Chips Constellation, Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>4508-4510</s1></fA20><fA21><s1>2004-05-31</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0242314</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A GaInN light-emitting diode (LED) employing an omni-directional reflector (ODR) is presented. The ODR consists of a RuO<sub>2</sub> ohmic contact to p-type GaN, a quarter-wave thick SiO<sub>2</sub> low-index layer perforated by an array of micro-contacts, and an Ag layer. Calculations predict a 98% angle-averaged reflectivity at λ=450 nm for an GaN/SiO<sub>2</sub>/Ag ODR, much higher than that for a 20 period Al<sub>0.25</sub>Ga<sub>0.75</sub>N/GaN distributed Bragg reflector (49%) and an Ag reflector (94%). It is shown that the RuO<sub>2</sub>/SiO<sub>2</sub>/Ag ODR has higher reflectivity than Ni/Au and even Ag reflectors, leading to a higher light extraction efficiency of GaInN LEDs with ODR. The electrical properties of the ODR-LED are comparable to those LEDs with a conventional Ni/Au contact. © 2004 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="X"><s0>001D03G02C1</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C40N</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8560J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>4282G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7340N</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Ruthénium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Ruthenium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Silicium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Silicon compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Argent</s0><s2>NC</s2></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Silver</s0><s2>NC</s2></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Couche mince semiconductrice</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor thin films</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Diode électroluminescente</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Light emitting diodes</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Réflecteur Bragg réparti</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Distributed Bragg reflectors</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Facteur réflexion</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Reflectivity</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Contact ohmique</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Ohmic contacts</s0></fC03><fN21><s1>152</s1></fN21><fN47 i1="01" i2="1"><s0>0421M000094</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00A445 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00A445 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:04-0242314
|texte= GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector
}}
| This area was generated with Dilib version V0.5.77. |  |